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Radical Plasma Source MA-Series

The RPS MA3000 series is designed for the usage at vacuum chambers. Typical process pressures are between 0.3 Torr and 5.0 Torr.

A Remote Plasma Source (RPS) is defined by the fact that a plasma is only generated and existing in the RPS itself, not in the process chamber.

No plasma, only radicals are reaching the process chamber. Therefore the RPS system is ideal for applications which necessarily need to avoid physical effects as ion bombardment and high thermal load.

The radicals generated by the Remote Plasma Source are creating only a chemical reaction at the surface of the substrates. That is leading to extremely low thermal load and damage free etching at high rates.

KEY ELEMENTS:

Unique features of the Remote Plasma Source system are providing leading edge technology in the areas of:

  • Isotropic etching of silicon, silicon nitride, silicon oxide with superior etch rates.
  • Photo resist stripping on different materials as silicon, silicon oxide, metals, high-k, low-k materials.
  • Chamber Cleaning at low pressures using e.g. 2 slm NF3 @ 0.5 Torr.
  • Flexible PCB’s: Drilling and Desmear.
  • Surface Treatment as Nitridation or Oxidation of silicon surfaces.
  • Best performance in semiconductor.
  • Backend applications as wafer thinning and stress relief.

KEY BENEFITS:

  • unique compact design (450 x 250 x 250 mm).
  • water cooled plasma zone.
  • very high efficiency.
  • high plasma density.
  • pulse mode possible.
  • ultra clean remote plasma source.
  • ideal for high tech semiconductor processing.
  • easy, cost and time saving maintenance.
  • simple interfacing to any equipment(KF40 or ISO-K63).

TECHNICAL DATA: Etch Rates

The RPS-System provides isotropic etching behavior enabling conform etch rates even at high aspect ratios:

  • More than 20 µ/min for SU-8 samples
  • Up to 90 µm/min for silicon samples
  • More than 10 µm/min for 8” silicon wafers
  • Up to 10µm/min for photo resist ashing on 300mm wafers
  • SiN and BPSG typical 1µm/min
  • Thermal Oxide typical 250nm/min
  • Tungsten: approx. 0.5µm/min on 300mm wafers

TECNICAL DATA: Various

1 Dimensions:

a) Microwave Radical Generator MA 3000
450mm x 250mm x 250mm

b) Power Supply MX 3000 (19” rack, 3HE)
670mm x 500mm x 135mm (including handholds and connectors)

2 Weights

a) Microwave Radical Generator MA 3000
Approx. 24,5 kg (standard - configuration)

b) Power Supply MX 3000
Approx. 15,5 kg

3 Electrical Specifications

a)  Microwave Radical Generator MA 3000
Output Magnetron: max. 3000 Watt con. @ 2,45GHz

b)  Power Supply MX 3000
Input voltage:  3 x 400 V AC +/- 10%; 3 phases,
Power Frequency:  50 – 60 Hz
Input Current at 400V: < 10A / phase


4 Range of operation

Pressure 0.5 Torr – 5.0 Torr
Process gas flow typical total flow: 500 sccm – 10 slm
      
5 Usable Process Gases

Usage of nearly every process gas is possible due to the water cooled plasma zone and the pure Alumina resp. Sapphire plasma chamber.
Most common process gases are:
a) reactive: CF4, SF6, NF3, O2, H2 , F2
b) inert: N2, Ar, He

Remote Plasma Sources

Type

Prim. Heating circuit

Reactor outlet connector

Applicator

HV/Heating Connector

Applicator alignment

MA1250C-003BC

230 V AC / 208 V AC

ISO-K63

Sapphire/Ceramic

Cable lug /Terminals

-

MA2000C-133BB

230 V AC / 208 V AC

ISO-K63

Ceramic

Lemosa / Circular

90°

MA2000C-223BB

230 V AC / 208 V AC

KF40

Ceramic

Lemosa / Circular

90°

MA3000C-283BB

230 V AC / 208 V AC

KF40

Ceramic

Lemosa / Circular

MA3000C-293BB

230 V AC / 208 V AC

ISO-K63

Ceramic

Lemosa / Circular

90°

MA3000C-363BB

230 V AC / 208 V AC

ISO-K63 (optional KF40)

Quartz

ODU

MA3000C-373BB

230 V AC / 208 V AC

ISO-K63 (optional KF40)

Sapphire

ODU

MA3000C-403BB

230 V AC / 208 V AC

KF40

Sapphire

Lemosa / Circular

90°

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